A study on Silicon dry Etching for Solar Cell Fabrication Using Hollow Cathode Plasma System

태양전지 제작을 위한 Hollow Cathode Plasma System의 실리콘 건식식각에 관한 연구

  • ;
  • Suresh Kumar Dhungel ;
  • 유진수 (성균관대학 정보통신공학부) ;
  • ;
  • 이준신 (성균관대학 정보통신공학부)
  • Published : 2004.02.01

Abstract

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

Keywords

Hollow Cathode Plasma(HCP);Multicrystalline;Ion bombardment;Texturing

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