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Estimation of Piezoelectric Fields built in InxGa1-XGaN Quantum Well Structures using Numerical Analysis

InxGa1-XN/GaN 양자우물 구조의 수치 해석을 이용한 압전장 평가

  • 김경찬 (광운대학교 전자재료공학과) ;
  • 김태근 (광운대학교 전자재료공학과)
  • Published : 2004.01.01

Abstract

Piezoelectric fields built in I $n_{x}$G $a_1$$_{-x}$N/GaN (x=0.06∼0.1) quantum wells (QWs) have been estimated by comparing the transition energies, both calculated and measured by photoluminescence (PL). The calculation was numerically carried out with a rectangular QW model, where the effective bandgap considering a bowing facto, energy levels quantized for the lowest lying electrons and heavy holes (1e-lhh), and biaxial compressive strain were included except for the piezoelectric fields. The calculated values were observed to be larger (9∼15 meV) than the measured values by PL, which was considered to be caused by the piezoelectric fields built in InGaN/GaN QW interface. In addition, we observed the energy shift by measuring the EPDPL (excitation power-dependent PL), which was compared with the energy difference caused by the piezoelectric fields.

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