Fabrication and Properties of MI Sensor Device using CoZrNb Films

CoZrNb막을 이용한 MI센서 소자의 제작 및 특성

  • 허진 (동아대학교 전기전자컴퓨터공학부) ;
  • 김영학 (부경대학교 전기공학과) ;
  • 신광호 (경성대학교 멀티미디어공학과) ;
  • 사공건 (동아대학교 전기전자컴퓨터공학부)
  • Published : 2004.01.01


Magneto-Impedance(MI) sensor is a highly sensitive sensor, which was able to detect a weak geomagnetic field. It also has a merit to be able to build in the low power system. In this study, their magnetic permeability and anisotropy field(H$\sub$k/) as a function of some different thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ respectively for 2 hours. Magnetic properties of films are measured by using a M-H loop tracer. Magnetic permeability of a film is measured over the frequency range from 1 ㎒ to 750㎒. By thickening a CoZrNb film relatively, magnetic permeability and impedance are examine to design the. MI sensor which drives at 50㎒, and thereof fabricated the MI sensor which drives at the 50㎒.


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