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A Lateral Trench Electrode Power MOSFET with Superior Electrical Characteristics for Smart Power IC Systems

스마트 파워 IC를 위한 트렌치 파워 MOSFET의 전기적 특성에 관한 연구

  • Published : 2004.01.01

Abstract

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

References

  1. IEEE Trans., ED v.46 no.8 A new lateral trench-gate conductivity modulated power transistor Jun Cai;K. O. Sin Johnny;K. T. Mok Philip
  2. Trans. on EEM v.2 no.1 Simulation of a novel lateral trench electrode IGBT with improved latch-up and forward blocking characteristics E.G.Kang;S.H.Moon;M.Y.Sung
  3. 전기전자재료학회논문지 v.13 no.5 래치 업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT 강이구;성만영
  4. Trans. on EEM v.2 no.3 A novel EST with trench electrode to immunize Snab-back effect and to obtain high blocking voltage E.G.Kang;M.Y.Sung

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