DOI QR코드

DOI QR Code

Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique

급속 건식 열산화 방법에 의한 초박막 SiO2의 성장과 특성

  • 정상현 (청주대학교 정보통신공학부) ;
  • 김광호 (청주대학교 정보통신공학부) ;
  • 김용성 (청주대학교 정보통신공학부) ;
  • 이수홍 (세종대학교 전자정보통신공학부)
  • Published : 2004.01.01

Abstract

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva & Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

References

  1. IEEE Trans. Electron Devices v.47 Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage stress E.M.Vogel;J.S.Suehle;M.D.Edelstein;B.Wang;Y.Chen;J.B.Bernstein https://doi.org/10.1109/16.842960
  2. IEEE IEDM'96 Tech. Digest Gate Oxide Scaling Limits and Projections C.Hu
  3. 전기전자재료학회논문지 v.8 no.5 초박막 산화막 MOS 캐패시터에서 전자파 간섭의 극성 효과 강정진
  4. Nature v.384 Silicon-based light emitting devices integrated into micro electronic circuits K.D.Hirschman;L.Tsybeskov;S.P.Duttagupta;P.M.Fauchet https://doi.org/10.1038/384338a0
  5. Progress in Photovoltaics v.9 Third generation photovoltaic s: Ultra-High conversion efficiency at low cost M.A.Green https://doi.org/10.1002/pip.360
  6. Silicon Processing for the VLSI Era v.4 S.Woof
  7. 전기전자재료학회 논문지 v.16 no.3 게이트 산화막 어닐링을 이용한 서브 마이크론 PMOS 트랜지스터의 NBTI 향상 김영민 https://doi.org/10.4313/JKEM.2003.16.3.181
  8. Silicon Processing for the VLSI Era v.1 S.Wolf;R.N.Tauber
  9. 전기전자재료학회 논문지 v.4 no.2 금속 열처리 방법으로 성장한 재 산화된 질화 산화막의 전기적 특성 향상 양광선;손문희;박훈수;김봉열
  10. J. Appl. Phys v.36 General relationship for the thermal oxidation of silicon B.E.Deal;A.S.Grove https://doi.org/10.1063/1.1713945
  11. Semicond. Sci. Technol. v.10 Growth kinetics of thermal SiO₂ thin films M.A.F.Gomes;E. F. da Silva, Jr;J.A.Aguiar https://doi.org/10.1088/0268-1242/10/7/022
  12. Semicond. Sci. Technol. v.12 Simulation of the early stages of thin SiO₂ films growth E. F. da Silva, Jr;B.D.Stosic https://doi.org/10.1088/0268-1242/12/8/018
  13. Semicond. Sci. Technol. v.15 Effect of post-oxidation annealing of the oxynitride on the C-V and G-V characteristics of Al/thin oxynitride/n-Si tunnel diodes V.K.Bhat;K.N.Bhat;A.Subrahamanyam https://doi.org/10.1088/0268-1242/15/9/301
  14. Plenum The Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface J.Maserjian;C.Helms(ed.);B.E.Deal(ed.)
  15. IEEE Electron Devices Letter v.15 no.11 Breakdown characteristics of RTO 10 nm SiO₂ films grown at different temperatures L.Fonseca;F.Campabadal https://doi.org/10.1109/55.334663
  16. Semiconductor Material and Device Characterization D.K.Schroder