Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique

급속 건식 열산화 방법에 의한 초박막 SiO2의 성장과 특성

  • 정상현 (청주대학교 정보통신공학부) ;
  • 김광호 (청주대학교 정보통신공학부) ;
  • 김용성 (청주대학교 정보통신공학부) ;
  • 이수홍 (세종대학교 전자정보통신공학부)
  • Published : 2004.01.01


Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva & Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.


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