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Dry Etching of Polysilicon in Hbr/O2 Inductively Coupled Plasmas

Hbr/O2 유도결합 플라즈마를 이용한 폴리실리콘 건식식각

  • 범성진 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 이혜영 (서울대학교 반도체공동연구소) ;
  • 김종준 (서울대학교 반도체공동연구소)
  • Published : 2004.01.01

Abstract

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 %. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

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