The Transient Response of CF$_4$ RF Plasmas Using One-dimensional Fluid Model

1차원 유체모델을 이용한 CF$_4$ RF 플라즈마의 과도응답 특성

  • 소순열 (북해도대학교 전자정보공학과) ;
  • 임장섭 (목포해양대학교 전자통신공학과)
  • Published : 2004.01.01


$CF_4$ gas is one of the most useful gases in modern technologies for semiconductor fabrication. However, there are many problems which should be solved in order to fabricate semiconductor device, for example, etching speed drop due to ion charge-up and etching selectivity drop due to the high electron energy. One of useful method in order to suppress their damages above is pulsed-time modulated plasma (PM). However, transient responses of charged particles occur when the source power is turned-on and -off in PM method. To control plasma properties in detail, such a transient phenomenon must be investigated. In this paper, we investigate $CF_4$ RF plasma properties under a one-dimensional fluid model. And also for dynamic and stable control of $CF_4$ plasmas, we investigated the transient behavior of the plasmas after step up or down of the amplitude of the power source voltage $V_s$(t). Fundamental properties of transient $CF_4$ plasmas was discussed. Furthermore, we intend to discuss new method for pulsed-time plasma modulation.


CF$_4$;Modeling;Transient Response;RF plasma


  1. E. Gogolides, M. Stathakopoulos and A. Boudouvis, 'Modelling of radio frequency plasmas in tetrafluoromethane($CF_4$): the gas phase physics and the role of negative ion detachment', J. Phys. D; Appl. Phys. Vol. 27, pp. 1878 (1994)
  2. A. A. Kulikovsky, 'A More Accurate Scharfetter Gummel Algorithm of Electron Transport for Semiconductor and Gas Discharge Simulation', J. Com. Phys., Vol.119, pp. 149 (1995)
  3. Ph. Belenguer and J.P. Boeuf, 'Transition between different regimes of rf glow discharge', Phys, Rev. A, Vol. 41 No. 8, pp. 4447 (1990)
  4. A. C. W. Biebericher, J. Bezemer, W. F. van der Weg, and W. J. Goedheer, 'Deposition rate in modulated radio-frequency silane plasmas', Appl. Phys. Lett., Vol.76, pp. 2002 (2000)
  5. Nikolaos V. Mantzaris, Andreas Boudouvis and Evngelos Gogolides, 'Radio-frequency plasmas in $CF_4$: Self-consistent modeling of the plasma physics and chemistry', J. Appl. Phys., Vol.77 No.2, pp. 6169 (1995)
  6. S. Segawa, M. Kurihara, N. Nakano and T. Makabe, 'Dependence of Driving Frequency on Capacitively Coupled Plasmas in $CF_4$', Jpn. J. Appl. Phys., Vol. 38, pp. 4416 (1999)
  7. 김승범, 김창일, '$Ar/CF_4$ 고밀도 플라즈마에서 $(Ba, Sr)TiO_3$ 박막의 식각 메카니즘'. 전기학회논문지, 49C권 5호, pp. 265 (2000)
  8. 최영욱, 이홍식, 임근희, 김태희, 백민수, 장길홍, '펄스 플라즈마 반응기의 모델링에 의한 해석', Trans. KIEE. Vol. 49C, No. 1, pp. 30 (2000)
  9. Seiji Samukawa and Tetsu Mieno, 'Pulsed-time modulated plasma discharge for highly selective, highly anisotropic and charge-free etching', Plasma Sources Sci. Technol. Vol 5, pp. 132 (1996)
  10. J. P. Boeuf and L.C. Pitchford, 'Two-dimensional rnodel of a capacitively coupled rf discharge and comparisons with experiments In the Gaseous Electronics Conference reference reactor', Phys. Rev. E. Vol. 51, No. 2, pp. 1376 (1995)
  11. H. Itoh, Y. Matsumura, K. Satoh, Y. Nakao and H. Tagashira, 'Development of Electron Swarms in $CF_4$', Proc, XXI. Int. Conf. on Phenomena in Ionized Gases, pp. 385 (1993)
  12. Mark A. Sobolewski, Yichen Wangm and Amanda Goyette, 'Measurements and modeling of ion energy distributions in high-density, radio-frequency biased $CF_4$ discharges', J. Appl. Phys., Vol. 91 No. 10, pp. 6303 (2002)
  13. Brian K. McMillin and Michael R. Zachariah, 'Two-dimensional imaging of $CF_2$ density by aser-induced fluorescence in $CF_4$ etching plasmas In 'he gaseous electronics conference reference cell', J. Vac. Sci. Technol. A, Vol.15 No.2, pp. 230 (1997)
  14. T. Kimura and K. Ohe, 'Model and probe measurements of inductively coupled $CF_4$ discharges', J. Appl, Phys., Vol.92 No.4, pp. 1780 (2002)
  15. L.G. Christophorou, J.K. Olthoff and M.V.V.S. Rao, 'Electron Interactions with $CF_4$', J. Phys. and Chem. Ref. Data, Vol.24 No.5, pp. 1341 (1996)