Development of I-Chuck for Oxide Etcher

Oxide Etcher 용 E-Chuck의 기술개발

  • 조남인 (선문대학교 전자정보통신공학부) ;
  • 남형진 (선문대학교 전자정보통신공학부) ;
  • 박순규 ((주)피브이트로닉스)
  • Published : 2003.12.01

Abstract

A unipolar-type E-chuck was fabricated for the application of holding silicon wafers in the oxide etcher. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on thin coated copper substrates to minimize the plasma damage during the etch processing. Thin film heater technology was also developed for new type of E-chuck.

Keywords

E- Chuck;Oxide etcher;Semiconductor processing;Unipolar-type E-Chuck