DOI QR코드

DOI QR Code

The Passivation of GaAs Surface by Laser CVD

  • Sung, Yung-Kwon (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Song, Jeong-Myeon (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Moon, Byung-Moo (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Rhie, Dong-Hee (Department of Electrical Engineering, College of Engineering, Suwon University)
  • 발행 : 2003.12.01

초록

In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH$_4$ and NH$_3$ were used to obtain SiN films in the range of 100∼300$^{\circ}C$ on p-type (100) GaAs substrate. To determine interface characteristics of the metal-insulator-GaAs structure, electrical measurements were performed such as C-V curves and deep level transient spectroscopy (DLTS). The results show that the hysteresis was reduced and interface trap density was lowered to 1,012 ∼ 1,013 at 100 ∼ 200$^{\circ}C$. According to the study of surface leakage current, the passivated CaAs has less leakage current compared to non-passivated substrate.

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