Wafer Level Packaging of RF-MEMS Devices with Vertical feed-through

Ultra Thin 실리콘 웨이퍼를 이용한 RF-MEMS 소자의 웨이퍼 레벨 패키징

  • 김용국 (한국과학기술연구원 마이크로시스템센터) ;
  • 박윤권 (한국과학기술연구원 마이크로시스템센터) ;
  • 김재경 (한국과학기술연구원 마이크로시스템센터) ;
  • 주병권 (한국과학기술연구원 마이크로시스템센터)
  • Published : 2003.12.01


In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.


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