Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon

  • Park, Kwang-Youl (Div. of Electrical and Electronic Eng., Kyungnam University) ;
  • Kang, Kyung-Suk (Div. of Electrical and Electronic Eng., Kyungnam University) ;
  • Kim, Seong-Jeen (Div. of Electrical and Electronic Eng., Kyungnam University) ;
  • Lee, Sang-Hoon (Div. of Electrical and Electronic Eng., Kyungnam University) ;
  • Park, Bok-Gil (Div. of information and Communication Eng., Kongju National University) ;
  • Sung, Man-Young (Dpt. of Electrical Engineering, Korea University)
  • 발행 : 2003.12.01


In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.


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