Effects of Mixed Oxidizer on the W-CMP Characteristics

혼합 산화제가 W-CMP 특성에 미치는 영향

  • 박창준 (대불대학교 전기공학과) ;
  • 서용진 (대불대학교 전기공학과) ;
  • 김상용 (㈜아남반도체 FAB 사업부) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2003.12.01


Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.


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