Capacitance-Voltage Characteristics in the Double Layers of SiO$_2$/Si$_3$N$_4$

SiO$_2$/Si$_3$N$_4$ 이중 박막의 C-V 특성

  • Hong, Nung-Pyo (Dept.of ElectricalEngineering, Engineering College, Kwangwoon University) ;
  • Hong, Jin-Woong (Dept.of ElectricalEngineering, Engineering College, Kwangwoon University)
  • Published : 2003.10.01


The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.


Electret;Oxide (SiO$_2$);Nitride (Si$_3$N$_4$);C-V Plot;HTB(High Temperature Bias)


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