Electrical Characteristics of Oxide Layer Due to High Temperature Diffusion Process

고온 확산공정에 따른 산화막의 전기적 특성

  • 홍능표 (광운대 공대 전기공학과) ;
  • 홍진웅 (광운대 공대 전기공학과)
  • Published : 2003.10.01


The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.


BMD(Bulk Micro Defect);$(SiO_2)$;Polyback;Power semiconductor


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