Chemical Mechanical Polishing Characteristics with Different Slurry and Pad

슬러리 및 패드 변화에 따른 기계화학적인 연마 특성

  • 서용진 (대불대학교 전기공학과) ;
  • 정소영 (대불대학교 전기공학과) ;
  • 김상용 (동부 아남 반도체 FAB 사업부)
  • Published : 2003.10.01


The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.


Chemical mechanical polishing (CMP);high selectivity slurry (HSS);shallow trench isolation (STI);global planarization;reproducibility


  1. S. Y. Kim, K. J. Lee, Y. J. Seo, 'In-situ End Point Detection(EPD) of STI-CMP Process Using High Selectivity Slurry', Microelectronic Engineering, Vol. 66, Issue 1-4, pp. 463-471, 2003
  2. S. Y. Kim, C. J. Park, Y. J. Seo, 'Signal Analysis of End Point Detection (EPD) Method Based on Motor Current (MC)', Microelectronic Engineering, Vol. 66, Issue 1-4, pp. 472-479, 2003
  3. K. Smekalin, 'CMP Dishing Effects in Shallow Trench Isolation', Solid State Technology, pp.187-194, (1997)
  4. 이우선, 서용진, 김상용, 장의구, 'STI-CMP 공정의 질화막 잔존물 및 패드 산화막 손상에 대한 연구', 대한전기학회 논문지, 제50권, 9호, pp. 438-443, 2001
  5. B. Wihters, E. Zhao, W. Krusell, R. Jairath and S. Hosali, 'Wide Margin CMP for STI', Solid State Technology, pp.173-179, 1998
  6. J. Y. Cheng, T. F. Lei, and T. S. Chao, 'A Novel Shallow Trench Isolation Technique', J. Appl. Phys, Vol. 36, No. 3B, pp.1319-1324, 1997
  7. 김상용, 백명기, 김창일, 장의구, 'STI 구조에 대한 CMP 공정에 관한 연구', 대한전기학회 춘계 학술 대회 논문집, p.125, 1998
  8. S. J. Fang, S. Garza, H. Guo, T. H. Smith, G. B. Shinn, J. E. Campbell, and M. L. Hartsell, 'Optimization of the Chemical Mechanical Polishing Process for Premetal Dielectrics', Journal of the Electrochemical Society, Vol. 147, No. 2, pp.682-686, 2000
  9. Y. J. Seo, S. Y. Kim, W. S. Lee, 'Optimization of Pre-Metal Dielectric (PMD) Materials', Journal of Materials Science : Materials in Electronics, Vol. 12, No. 9, pp. 551-554, 2001
  10. W. Ong, S. Robles, S. Sohn, and B. C. Nguyen, 'Characterization of Inter-Metal and Pre-Metal Dielectric Oxides for Chemical Mechanical Polishing Process Integration', VMIC conf., p.197, 1993
  11. 김상용, 서용진, 김태형, 이우선, 김창일, 장의구, 'Chemical Mechanical Polishing(CMP) 공정을 이용한 Multilevel Metal 구조의 광역 평탄화에 관한 연구', 한국전기전자재료학회 논문지, 제11권, 12호, pp. 1084-1090, 1998