Chemical Mechanical Polishing Characteristics with Different Slurry and Pad

슬러리 및 패드 변화에 따른 기계화학적인 연마 특성

  • 서용진 (대불대학교 전기공학과) ;
  • 정소영 (대불대학교 전기공학과) ;
  • 김상용 (동부 아남 반도체 FAB 사업부)
  • Published : 2003.10.01


The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.


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