Annealing Effect of the Chalcogenide Thin Film for Holographic Grating Formation

홀로그래픽 격자 형성에 대한 칼코게나이드 박막의 열처리 효과

  • 박정일 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 이정태 (광운대학교 전자재료공학과) ;
  • 이영종 (여주대학 전자과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2003.08.01


We prepared the chalcogenide As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/, Se$\_$75/Ge$\_$25/ thin film. Holographic grating was formed by the He-Ne laser( λ =633 nm). Annealing at 100$^{\circ}C$ and 200$^{\circ}C$ has been used to change the optical property of chalcogenide thin films for holographic grating formation. As the results, large variation of the optical property was generated at the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ chalcogenide film. Diffraction efficiency of the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ film has been enhanced about three times


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