A Study or the Crystallographic Properties or ZnO/SiO2/Si Thin Film for FBAR

FBAR용 ZnO/SiO2Si 박막의 결정학적 특성에 관한 연구

  • 금민종 (경원대학교 전기정보공학과) ;
  • 손인환 (신성대학 전기과) ;
  • 최명규 (경원전문대학 전기제어시스템과) ;
  • 추순남 (경원전문대학 전기제어시스템과) ;
  • 최형욱 (경원대학교 전기정보공학과) ;
  • 신영화 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2003.08.01


In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.


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