Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching

증착과 식각의 연속 공정을 이용한 저온 선택적 실리콘-게르마늄 에피 성장

  • 김상훈 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 이승윤 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 박찬우 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 심규환 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 강진영 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀)
  • Published : 2003.08.01


This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.


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