Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching

증착과 식각의 연속 공정을 이용한 저온 선택적 실리콘-게르마늄 에피 성장

  • 김상훈 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 이승윤 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 박찬우 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 심규환 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀) ;
  • 강진영 (한국전자통신연구원 무선통신소자연구부 SiGe 소자팀)
  • Published : 2003.08.01

Abstract

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

Keywords

File

Download PDF

References

  1. 전기전자재료학회논문지 v.10 no.1 초고주파 응용을 위한 Si/SiGe 이종 접합 쌍극자 트렌지스터 기술 동향 김남영;형창희
  2. 한국전기전자재료학회 1996년추계학술대회 논문집 상압 화학 기상 증착기를 이용한 고출력 SiGe HBT 제작 이수민;조덕호;한태현;염병렬
  3. 한국전기전자재료학회 2002년추계 학술대회논문집 Si-Ge-H-Cl 계를 이용한 자기정렬 HBT 용 Si 및 SiGe의 선택적 에피성장 김상훈;심규환;강진영
  4. Applied Surface Science v.100 no.101 Selective epitaxial Si based layer and TiSi₂deposition by integrated chemical vapor deposition J.L.Regolini;J.Margail;S.Bodner;D.Maury;C.Morin https://doi.org/10.1016/0169-4332(96)00340-6
  5. Appl. Phys. Lett. v.58 no.19 Low temperature selective epitaxy by ultra high vacuum chemical vapor deposition from SiH₄and GeH₄/H₂ M.Racanelli;D.W.Greve https://doi.org/10.1063/1.104998
  6. Applied Surface Science v.100 no.101 Electrical properties of $metal/Si_{1-x}Ge_{x}/Si(100)$ hetero junctions H.Shinoda;M.Kosaka;J.Kojima;S.Zaima;H.Ikeda https://doi.org/10.1016/0169-4332(96)00333-9
  7. J. Appl. Phys. v.74 no.9 Pattern sensitivity of selective chemical vapor deposition : pressure dependence T.I.Kamins https://doi.org/10.1063/1.354200
  8. Appl. Phys. Lett. v.47 no.3 Calculation of critical layer thickness versus lattice mismatch for $Ge_{x}Si_{1-x}/Si$ strained layer hetero-structure R.People;J.C.Bean https://doi.org/10.1063/1.96206
  9. Appl. Phys. Lett. v.61 no.6 Kinetics of selective epitaxial deposition of $Si_{1-x}Ge_{x}$ T.I.Kamins;D.W.Vook;P.K.Yu;J.E.Turner https://doi.org/10.1063/1.107817