A New Junction Termination Structure by Employing Trench and FLR

Trench와 FLR을 이용한 새로운 접합 마감 구조

  • 하민우 (서울대학교 전기공학부) ;
  • 오재근 (서울대학교 전기공학부) ;
  • 최연익 (아주대학교 전자학과부) ;
  • 한민구 (서울대학교 전기학과부)
  • Published : 2003.06.01

Abstract

We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) $BV_ceo$.

Keywords

Junction termination;Breakdown;Trench;Ring;FLR

References

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