Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding of Alumina Abrasive in Diluted Silica Slurry

탈이온수로 희석된 실리카 슬러리에 알루미나 연마제가 첨가된 혼합 연마제 슬러리의 CMP 특성

  • 서용진 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과) ;
  • 최운식 (대불대학교 전기공학과) ;
  • 김상용 ((주)아남반도체 FAB 사업부) ;
  • 박진성 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2003.06.01


The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.


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