DOI QR코드

DOI QR Code

Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding of Alumina Abrasive in Diluted Silica Slurry

탈이온수로 희석된 실리카 슬러리에 알루미나 연마제가 첨가된 혼합 연마제 슬러리의 CMP 특성

  • 서용진 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과) ;
  • 최운식 (대불대학교 전기공학과) ;
  • 김상용 ((주)아남반도체 FAB 사업부) ;
  • 박진성 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2003.06.01

Abstract

The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

References

  1. 전기전자재료학회논문지 v.13 no.10 탈 이온수 압력과 정제된 N₂가스가 ILD-CMP 공정에 미치는 영향 김상용;이우선;서용진;김창일;장의구;박진성
  2. Proc. ISEIM-2001 Reduction of micro-defects in the inter-metal dielectric (IMD) chemical mechanical polishing (CMP) for ULSI applications S.W.Park;S.Y.Kim;Y.J.Seo
  3. J. Materials Science : Materials in Electronics v.12 no.9 Optimization of pre-metal dielectric (PMD) materials Y.J.Seo;S.Y.Kim;W.S.Lee https://doi.org/10.1023/A:1012461728470
  4. 전기전자재료학회 논문지 v.11 no.12 Chemical Mechanical Polishing(CMP) 공정을 이용한 Multilevel Metal 구조의 광역 평탄화에 관한 연구 김상용;서용진;김태형;이우선;김창일;장의구
  5. Proc. IUMRS-ICEM A study on the reproducibility of HSS STI-CMP process for ULSI applications S.Y.Jeong;S.Y.Kim;Y.J.Seo
  6. Electrochemical and Solid-State Letters v.5 no.4 Chemical mechanical polishing using mixed abrasive slurry A.Jinda;S.Hegde;S.V.Babu https://doi.org/10.1149/1.1479297
  7. Electrochemical and Solid-State Letters v.4 no.12 Chemical mechanical polishing of copper and barrier layer by manganese(Ⅳ) oxide slurry T.Hara;T.Kurosu;T.Doy https://doi.org/10.1149/1.1413702
  8. J. Electrochemical Society v.146 no.6 Chemical mechanical polishing of polyarylether low dielectric constant layers by manganese oxide slurry T.Hara;T.Tomisawa;T.Kurosu;T.Doy https://doi.org/10.1149/1.1391936
  9. Electrochem. Soc. Proc. v.99 Study of micro-defect on oxide CMP in VLSI circuits S.Y.Kim;Y.J.Seo;W.S.Lee;E.G.Chang
  10. 전기전자재료학회 논문지 v.15 no.10 실리카 슬러리의 희석과 연마제의 첨가가 CMP 특성에 미치는 영향 박창준;김상용;서용진 https://doi.org/10.4313/JKEM.2002.15.10.851