DOI QR코드

DOI QR Code

Etching Mechanism Of Bi4-xEuxTiO12 (BET) Thin films Using Ar/CF4 Inductively Coupled Plasma

Ar/CF4 유도결합 플라즈마를 이용한 BET 박막의 식각 메카니즘

  • 임규태 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2003.04.01

Abstract

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.

Keywords

References

  1. Appl. Phys. Lett. v.66 Preparation and ferroelectric properties of $SrBi_2Ta_2O_9$(/TEX> thin films K. Amanuma;T. Hase;Y. Miyasaka https://doi.org/10.1063/1.113140
  2. 전기전자재료학회논문지 v.12 no.2 PLD 기법에 의한 강유전체 SBT/YBCO/LaAIO₃헤테로 박막의 제작 및 특성 이재형;문병무;고중혁;구상모
  3. 전기전자재료락회논문지 v.15 no.9 비휘발성 메모리 소자응용을 위한 과잉 Bi 첨가에 따른 BLT 박막의 강유전 특성 김경태;김창일;강동희;심일운 https://doi.org/10.4313/JKEM.2002.15.9.764
  4. J. Appl. Phys. v.88 Ferroelectric properties of $Bi_{3.25}La_{0.75}Ti_3O_{12}$ thin films prepared by chemical solution deposition Di Wu;Aidong Li;Tao Zhu https://doi.org/10.1063/1.1322387
  5. 전기전자재료학회논문지 v.13 no.8 MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향 김태훈;김병호;송석표
  6. Appl. Phys. Lett. v.79 Fatigue-free samarium-modfied bismuth titanate ($Bi_{4-x}Sm_xTi_3O_{12}$) film capacitors having large spontaneous polarizations U. Chon;K. B. Kim;H. M. Jang;G. C. Yi https://doi.org/10.1063/1.1415353
  7. CRC Handbook of Chemistry and Physics(77th ed.) D. R. Lide(ed.)
  8. Thin Solid Films v.422 The effect of Eu-substituded $Bi_4Ti_3O_{12}$ thin films prepared by a metal-organic decomposition method Kyoung-Tae Kim;Chang-Il Kim;Dong Hee Kang;Il-Wun Shim https://doi.org/10.1016/S0040-6090(02)00981-1
  9. 한국전기전자재료학회 하계학술대회 논문집 CF4/Ar 플라즈마에 의한 BST 박막 식각 특성 김동표;김창일;서용진;이병기;장의구
  10. J. Appl. Phys. v.90 Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films S. B. Majumder;B. Roy;R. S. Katiyar;S. B. Krupanidhi https://doi.org/10.1063/1.1391416
  11. 전기전자재료학회논문지 v.15 no.11 Ar/CF₄유도결합 플라즈마를 이용한 $(Ba_{0.6}Sr_{0.4})TiO_3$ 박막의 식각 특성 강필승;김경태;김동표;김창일;이수재 https://doi.org/10.4313/JKEM.2002.15.11.933
  12. Handbook of X ray Photoelectron Spectroscopy J. Chastain