Electrical Properties of SBT Capacitors with various Annealing Atmosphere

다양한 열처리 분위기에 따른 SBT 커패시터의 전기적 특성

  • 조춘남 (광운대학교 전기공학과) ;
  • 김진사 (광운대학교 전기공학과) ;
  • 신철기 (광운대학교 전기공학과) ;
  • 최운식 (대불대학교 전기공학과) ;
  • 김충혁 (광운대학교 전기공학과) ;
  • 홍진웅 (광운대학교 전기공학과) ;
  • 이준웅 (한국전기전자재료학회)
  • Published : 2003.03.01


The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.


  1. J. of KIEEME(in korean) v.13 no.4 Fabrication and characteristics of PZT ferroelectric thin films by sol-gel processing and rapid thermal annealing D. S. Paik;J. H. Kim;H. U. Choi;K. S. Kim
  2. Intergrated Ferroelectrics v.17 Temperature dependence of the ferroeletric properties of $SrBi_2Ta_2O_9$ thin films Takehiro Noguchi;Takashi Hase;Yoichi Miyasaka
  3. Jpn. J. Appl. Phys. v.37 no.9B Effect of$H_2$sintering and Pt upper electrode on metallic Bi content in $SrBi_2Ta_2O_9$ thin films for ferroelectric memories prepared by sol - gel method Ichiro Koiwa;Takao Kanehara;Hiroyo Kato;Sachiko Ono;Alira Sakakibara;Tetsuya Osaka;Katsuhiko Asami
  4. Jpn. J. Appl. Phys. v.37 Effects of morphological changes of $Pt/SrBi_2Ta_2O_9$ interface on the electrical properties of ferroelectric capacitor D. S. Shin;H. N. Lee;C. W. Lee;Y. T. Kim;I. H. Choi
  5. J. Appl. Phys. v.87 no.6 Aging behavior and recovery of polarization in $Sr_{0.8}Bi_{2.4}Ta_2O_9$ thin films S. Y. Chen;S. K. Dey;Y. Torrii
  6. Jpn. J. Appl. Phys. v.37 no.9B Low-temperature synthesis of $SrBi_2Ta_2O_9$ ferroelectric thin films through the complex alkoxide method: effects of functional group, hydrolysis and water vapor treatment Kazumi Kato;Sachiko Ono;Alira Sakakibara.
  7. J. OF KIEEME(in korean) v.12 no.2 Electrical properties of SBT feroelectric thin films prepared by MOD C. I. Cheon;J. S. Kim;D. L. Kwong
  8. Journal of the Institute of Electronics Engineering of Korea v.35-D no.3 Preparation and characterization of $SrBi_2Ta_2O_9$ ferroelectric thin films for nonvolatile memory H. J. Chang;K. J. Suh;G. K. Changl
  9. Intergrated Ferroelectrics v.14 Phase formation and characterization of the $SrBi_2Ta_2O_9$ layered perovskite ferroelectric M. A. Rodrinues(et al)
  10. 광운대학교 대학원 박사학위논문 RF 스퍼터링법에 의한 SCT계 반도체 회로용 소자 제조 및 전기적 특성에 관한 연구 김진사