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A Study on the Properties and fabrication to the (Ba,Bi,Sr)TiO3 Ceramics for the Application of High Capacitance

고용량 캐패시터로의 응용을 위한 (Ba,Bi,Sr)TiO3세라믹스의 제조 및 특성에 관한 연구

  • 이상철 (광운대학교 전자재료공학과) ;
  • 최의선 (광운대학교 전자재료공학과) ;
  • 배선기 (인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 2003.03.01

Abstract

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

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