Hydrogen Post-annealing Effect of (Pb0.72,La0.28)Ti0.93O3 Films Fabricated by Pulsed Laser Deposition

펄스레이저 증착법으로 제작된(Pb0.72,La0.28)Ti0.93O3박막의 수소후열처리에 관한 전기적 특성 연구

  • 한경보 (연세대학교 전기전자공학과) ;
  • 전창훈 (연세대학교 전기전자공학과) ;
  • 전희석 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2003.03.01


Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.


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