Stabilization of Modified Deceleration Mode for Improvement of Low-energy Ion Implantation Process

저 에너지 이온 주입의 개선을 위한 변형된 감속모드 이온 주입의 안정화 특성

  • 서용진 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부)
  • Published : 2003.03.01


As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.


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