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Stabilization of Modified Deceleration Mode for Improvement of Low-energy Ion Implantation Process

저 에너지 이온 주입의 개선을 위한 변형된 감속모드 이온 주입의 안정화 특성

  • 서용진 (대불대학교 전기공학과) ;
  • 박창준 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부)
  • Published : 2003.03.01

Abstract

As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.

References

  1. Appl. Phys. Lett. v.76 no.21 Transient-enhanced diffusion of boron implanted at ultra-low energies in silicon: Localization of the source E. Schroer;V. Privitera;E. Napolitani;A. Carnera https://doi.org/10.1063/1.126578
  2. Appl. Phys. Lett. v.77 no.14 Boron penetration in $p^+$ polycrystalline-Si/Al₂O₃/Si metal oxide semiconductor system D. G. Park;H. J. Cho;I. S. Yeo;J. S. Roh;J. M. Hwang https://doi.org/10.1063/1.1315346
  3. 전기전자재료학회논문지 v.8 no.4 PICTS 방법에 의한 Boron 이온을 주입시킨 반절연성 GaAs 의 깊은 준위에 관한 연구 김인수;이철욱;배인호;최현태;손정식;김영일 https://doi.org/10.1063/1.1485128
  4. 전기전자재료학회논문지 v.11 no.5 Retrograde Well 형성을 위한 고에너지 이온주입에 대한 연구 윤상현;곽계달
  5. 윤상현, 곽계달, "Retrograde Well 형성을 위한 고에너지 이온주입에 대한 연구", 전기전자재료학회논문지, 11권, 5호, p.358, 1998.
  6. Appl. Phys. Lett. v.77 no.7 Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon P. F. P. Fichtner;M. Behar;J. R. Kaschny;A. Peeva;R. koegler;W. Skorupa https://doi.org/10.1063/1.1289062
  7. J. Electrochem. Soc. v.147 no.9 Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion G. Hobler;L. Pelaz;C. S. Rafferty https://doi.org/10.1149/1.1393926
  8. Appl. Phys. Lett. v.60 no.15 Localized fabrication of Si nanostructures by focused ion beam implantation A. J. Steckl;H. C. Mogul;S. Mogren https://doi.org/10.1063/1.107179
  9. Appl. Phys. Lett. v.75 no.11 1.55 ㎛ single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation H. Konig;S. Rennon;J. P. Reithmaier;A. Forchel;J. L. Gentner;L. Goldstein https://doi.org/10.1063/1.124732
  10. Appl. Phys. Lett. v.53 no.18 Formation of ultrashallow p'-n junctions by low-energy boron imoplantation using a modified ion implanter S. N. Hong;G. A. Ruggles;J.J. Paulos;J. J. Wortman;M. C. Ozturk https://doi.org/10.1063/1.100470
  11. 전기전자재료학회논문지 v.10 no.9 실리콘에 MeV로 이온주입된 인의 결함분포와 profile 에 관한 연구 정원채 https://doi.org/10.1063/1.100470
  12. Appl. Phys. Lett. v.80 no.23 Channeling of low energy heavy ions: Er in Si <111> S. M. Hogg;B. Pipeleers;A. Vantomme;M. Swart https://doi.org/10.1063/1.1485128