Enhancement of Q Factor in Parallel-Branch Spiral Inductors

병렬분기 방법을 이용한 박막 나선 인덕터의 Q 인자 향상

  • 서동우 (한국전자통신연구원 정보저장소자팀) ;
  • 민봉기 (한국전자통신연구원 정보저장소자팀) ;
  • 강진영 (한국전자통신연구원 정보저장소자팀) ;
  • 백문철 (한국전자통신연구원 정보저장소자팀)
  • Published : 2003.01.01


In the present paper we suggested a parallel branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on p-type silicon wafer (5∼15Ω-cm) under the standard CMOS process and it showed a enhanced qualify(Q) factor by more than 10 % with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with conventional spital inductors


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