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SiH4 Soak Effects in the W plug CVD Process

텡스텐 플러그 CVD 공정에서 SiH4 Soak의 영향

  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학부) ;
  • 김상용 (아남반도체) ;
  • 박진성 (조선대학교 공과대학 전기공학과)
  • Published : 2003.01.01

Abstract

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

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