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Improvement Study on Vertical Growth of Carbon Nanotubes and their Field Emission Properties at ICPCVD

유도결합형 플라즈마 화학기상증착법에서 탄소나노튜브의 수직성장과 전계방출 특성 향상 연구

  • 김광식 (한국화학연구원 화학소재연구부) ;
  • 류호진 (한국화학연구원 화학소재연구부) ;
  • 장건익 (충북대학교 공과대학 재료공학과)
  • Published : 2002.08.01

Abstract

In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

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