Crystallization of α-Fe2O3/AI2O3(0001) Thin films Studied by Synchrotron X-ray Scattering

α-Fe2O3/AI2O3(0001) 박막 결정화의 방사광 X-선 산란 연구

  • 조태식 (국립상주대학교 신소재공학과)
  • Published : 2002.08.01


The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (>40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (>$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.


  1. Appl. Phys. Lett. v.71 High sensitivity measurement of magnetic field using microcantilevers R.P. Cowburn;A.M. Moulin;M. E. Welland
  2. J. Appl. Phys. v.81 High harmonic generation and turbulence of magnetoelastic excitations in hematite single crystal V. Preobrazhensky;P. Pernod
  3. Phys. Rev. Lett. v.79 Atomic structure of the passive oxide film formed on iron M.F. Toney;A. J. Davenport;L.J. Oblonsky;M.P. Ryan;C.M. Vitus
  4. Phys. Rev. B. v.59 Metal oxide heteroepitaxy: Stranski-Krastanov growth for iron oxide on Pt(111) W. Weiss;M. Ritter
  5. J. of KIEEME v.15 Electrical characterization and metal contacts of ZnO thin films grown by the PLD method S.C. Kang;M. W. Shin
  6. Trans. on EEM v.1 Properties of Sr0.8Bi2.3(Ta₁-хNbх)₂O9+a thin films S.J. Park;G.E. Jang
  7. J. of KIEEME v.10 A properties of ZnO thin film deposited by magnetron sputtering and its resistivity and microstructure due to annealing S.H. Yi;Y. K. Sung;J. K. Kim
  8. Surface Science v.338 Preparation and characterization of ultra-thin iron oxide films on a Mo(100) surface J. S. Corneille;J. W. He;D.W. Goodman
  9. Jpn. J. Appl. Phys. v.35 Heteroepitaxial growth of α-Fe₂O₃thin film on (111) GGG M. Gomi;H. Toyoshima
  10. Appl. Phys. Lett. v.75 Effects of growth temperature on GaN nucleation layers M. S. Yi;H.H. Lee;D.J. Kim;S.J. Park;D.Y. Noh;C.C. Kim;J.H. Je
  11. J. of Crystal Growth v.240 Role of interfacial crystallites in the crystallization of α-Fe₂O₃/α-Al₂O(0001) thin films S.J. Doh;J.H. Je;T.S. Cho
  12. X-Ray Differaction B.E. Warren