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Hall Factor of Electrons in γ -valley due to Various Scatterings

γ -valley에서 산란의 종류에 따른 전자의 홀 인수

  • 서헌교 (인하대학교 전자전기컴퓨터공학부) ;
  • 박일수 (인하대학교 전자전기컴퓨터공학부) ;
  • 전상국 (인하대학교 전자전기컴퓨터공학부)
  • Published : 2002.08.01

Abstract

Hall factor of electrons in $\Gamma$-valley is calculated as functions of temperature, impurity concentration, and nonparabolicity of conduction valleys by taking into account the current density obtained from the Boltzmann transport equation. The dependence of the Hall factor on the temperature is clearly shown in the case of the optical phonon scattering and that on the impurity concentration is obvious in the case of the ionized impurity scattering. As the nonparabolicity of the conduction band increases, the Hall factor due to the acoustic or optic phonon scattering increases, whereas that due to the ionized impurity scattering decreases. The change of the Hall factor can be analysed in terms of the dispersion of relaxation time.

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