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The Electrical Characteristics of Chromium Oxide Film Produced by Son Beam Sputter Deposition

이온선 스퍼터 증착법에 의하여 제조된 CrOx의 전기적 특성

  • 조남제 (부경대학교 대학원 기계공학과) ;
  • 이규용 (부경대학교 기계공학과)
  • Published : 2002.06.01

Abstract

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

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