DOI QR코드

DOI QR Code

The Surface and Electrical Properties of BST Thin Films Prepared by Sol-Gel Method

Sol-Gel 방법에 의한 BST 박막의 표면 및 전기적 특성

  • 홍경진 (광주대학교 컴퓨터전자통신공학부) ;
  • 조재철 (초당대학교 전자공학과)
  • Published : 2002.06.01

Abstract

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

References

  1. Proc. 9th ISIF A simple unfied analytical model for ferroelectric thin film capacitor and its appliations for nonvolatile memory operation M.Azuma;D.Y.Chen;L.D.McMillan;C.A.Paz
  2. J. Appl. Phys. v.32 no.9B BaTiO₃partical size dependence of ferroelectricity in BaTiO₃/ polymer composite T.Yamamoto;K.Urabe;H.Banno https://doi.org/10.1143/JJAP.32.4272
  3. Ferroelectrics v.32 no.9B Dielectric constant and leakage current of epitaxially grown and polycrystalline SrTiO₃thin films K. Abe;S.Komatsu
  4. Mat. Res. Soc. Proc. v.361 Correlation of Ba1-x SrTiO₃materials and dielectric properties Robert Tsu;H.Y.Liu;W.Y.Hsu;Scott Summerfelt;K.Aoki
  5. Mat. Res. Soc. Proc. v.361 Microstructure evolution of epitaxial (Ba, Sr)TiO₃/(001) MgO thin films V.A.Alyoshin;E.V.Sviridov;Vi.M.Mukhortov;I.N.Zakharchenko;V.P.Dudkevich
  6. Mat. Res. Soc. Proc. v.361 Investigation of the characteristics of ferroelectric thin films deposited by pulsed laser ablation S.Sengupta;D.P.Vijay;S.B.Desu
  7. J. Appl. Phys. v.32 no.9B Preparation and Properties of Ferroelectric BaTiO₃Thin Films by Sol-Gel Process T.Hayashi;N.Ohji;K.Hirohara;T.Hukunaga;H.Maiwa https://doi.org/10.1143/JJAP.32.4092
  8. 전기전자재료학회논문지 v.11 no.9 Sol-Gel 법으로 제조한 (Ba, Sr)TiO₃박막의 구조 및 유전특성 이성갑;이영희;정장호;이문기
  9. 전기전자재료학회논문지 v.13 no.7 Sol-Gel 법으로 제조한 (Ba, Sr)TiO₃박막의 전기적특성 류기원;이영희;정장호;이문기
  10. 전기전자재료학회논문지 v.9 no.4 ULSI DRAM의 Capacitor 절연막용 BST 박막의 제작과 특성 류정선;강성준;윤영섭
  11. J. Chem. Soc. 有機物配位子を用ぃたゾルゲルによるTiO₂薄膜の作製と性質 西出利一;水上富士夫
  12. フラクタルって何だろう 高安秀樹;高安美佐子
  13. 요업재료의 과학과 기술 v.9 no.6 고유전율과 박막재료의 ULSI-DRAM에서의 응용현황과 전망 황철성
  14. IEICE Trans. Elec. v.E77-C no.3 (Ba0.75, Sr0.25)TiO₃Films for 256Mbit DRAM T.Horikwa;N.Mikami;H.Ito;Y.Ohno;T.Makita;K.Sato
  15. Mat. Res. Soc. Symp. Proc. v.361 Growth of Ferroelectric PLT Thin Films on Various Single Crystal Substrates Y.M.Kang;J.K.KU;S.BAIK