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Magnetic Properties of Co-Cr(-Ta)/Si Bilayered Thin Film

Co-Cr(-Ta)/Si 이층막의 자기적 특성

  • 김용진 (경원대학교 공대 전기전자공학과) ;
  • 박원효 (경원대학교 공대 전기전자공학과) ;
  • 금민종 (경원대학교 공대 전기전자공학과) ;
  • 최형욱 (경원대학교 공대 전기전자공학과) ;
  • 김경환 (경원대학교 공대 전기전자공학과) ;
  • 손인환 (신성대학 전기과)
  • Published : 2002.03.01

Abstract

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

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