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Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발

The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma

  • 조수범 (인하대학교 전자재료공학과) ;
  • 김진우 (인하대학교 전자재료공학과) ;
  • 정재성 (인하대학교 전자재료공학과) ;
  • 오범환 (인하대학교 전자재료공학과) ;
  • 박세근 (인하대학교 전자재료공학과) ;
  • 이종근 ((주) A.S.E.)
  • 발행 : 2002.03.01

초록

The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

참고문헌

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