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A Study on the Electrical Properties of Amorphous Sb-Bi-Te Thin Films

비정질 Sb-Bi-Te 박막의 전기적 특성에 관한 연구

  • ;
  • ;
  • D. Mangalaraj
  • 이준신 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 이재형 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • Published : 2002.03.01

Abstract

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

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