Photoluminescence in Carbon-doped GaAs Epilayers Grown on GaAs (311)A

GaAs (311)A 기판 위에 성장된 탄소 도핑된 GaAs 에피층의 광여기 발광

  • 조신호 (신라대학교 광전자공학과, 극초단광전자연구소)
  • Published : 2002.03.01


We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.


  1. J. Cryst. Growth v.226 Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs S. Cho;E. K. Kim
  2. J. Appl. Phys v.76 no.2 Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy M. Kondo;C. Anayama;N. Okada;H. Sekiguchi;K. Domen;T. Tanahashi
  3. J. Appl. Phys v.74 no.9 Characterization of annealed heavily C-doped p-AlGaAs K. Watanabe;H. Yamazaki
  4. Appl. Phys. Lett v.60 no.23 Growth of C-doped p-type Inx-Ga 1-xAS(0
  5. J. Cryst. Growth v.107 LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors Y. Ashizawa;T. Noda;K. Morinzuka;M. Asaka;M. Obara
  6. Solid State Commun. v.97 no.10 Strain and critical layer thickness analysis of carbon-doped GaAs S. I. Kim;M. S. Kim;S. K. Min
  7. 전기전자재료학회논문지 v.14 no.2 InAs/GaAs self-organized quantum dots 의 전기 광학적 특성 연구 김기홍;박종도;배인호;손정식;문병연;이주인
  8. 전기전자재료학회논문지 v.14 no.3 PLD 증착 변수에 따른 II-VI족 화합물 ZnO 반도체 박막의 발광 특성 연구 배상혁;윤일구;서대식;명재민;이상렬
  9. 전기전자재료학회논문지 v.13 no.10 ZnS 형광체 분말의 결정결함에 따른 발광 특성 연구 박용규;성현호;조황신;양해석;이종찬;박대희
  10. J. Cryst. Growth v.31 Kinetic aspects in the vapor phase epitaxy of III-V compounds D. W. Shaw
  11. Appl. Phys. Lett. v.63 no.13 One step metalorganic vapor phase epitaxy grown AlGaInP visible laser using simultaneous impurity doping C. Anayama;H. Sekiguchi;M. Kondo;H. Sudo;T. Fukushima;A. Furuya;T. Tanahasi
  12. J. Cryst. Growth v.105 Carbon doping of III-V compounds grown by MOMBE C. R. Abernathy;S. J. Pearton;F. Ren;W. S. Hobson;T. R. Fullowan;A. Katz;A. S. Jordan;J. Kovalchick
  13. J. Cryst. Growth v.145 Carbon doping in metalorganic vapor phase epitaxy T. F. Kuech;J. M. Redwing
  14. Jpn. J. Appl. Phys v.37 no.12B Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots S. Cho;C. K. Hyon;E. K. Kim;S. K. Min
  15. Jpn. J. Appl. Phys v.35 no.12A Growth and characterization of vertical-cavity surface-emitting lasers grown on (311)A-oriented GaAs subst- rates by molecular beam epitaxy M. Takahashi;P. O. Vaccaro;T. Watanabe;T. Mukaihara;F. Koyama;K. Iga
  16. Physica v.34 Temperature dependence of the energy gap in semiconductors Y. P. Varshi
  17. J. Korean Phys. Soc v.32 no.4 Photoluminescnece in carbon-doped GaAs grown by atmospheric-pressure metal-organic chemical vapor deposition S. Cho;E. K. Kim;S. K. Min
  18. J. Appl. Phys v.66 no.9 Band-gap narrowing in highly doped n- and p- type GaAs studied by photoluminescence spectroscopy G. Borghs;K. Bhattacharyya;K. Deneffe;P. V. Mieghem;R. Mertens
  19. Appl. Phys. Lett v.56 no.12 Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs B. J. Aitchison;N. M. Haegel;C. R. Abernathy;S. J. Pearton
  20. Phys. Rev. B v.4 no.10 Thermal dissociation of exitons bounds to neutral acceptors in high-purity GaAs D. Bimberg;M. Sondergeld;E. Grobe
  21. Phys. Rev. B v.45 no.16 Exciation-power dependence of the near-band-edge photoluminescence of semiconductors T. Schmidt;K. Lischka;W. Zulehner