A Novel Trench Electrode BRT with the Intrinsic Region for Superior Electrical Characteristics

고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터

  • 강이구 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2002.03.01


In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.


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