The Influence of the Mg-doped p-GaN Layer Activated in the O2 Ambient on the Current-Voltage Characteristics of the GaN-Based Green LEDs

O2 분위기에서 p-GaN 층의 Mg 활성화가 GaN계 녹색 발광소자에 미치는 전류-전압특성

  • 윤창주 (전북대학교 반도체물성연구센터) ;
  • 배성준 (전북대학교 반도체물성연구센터)
  • Published : 2002.05.01


The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.


  1. 전기전자재료학회논문지 v.14 no.2 n+ GaN/AlGaN/GaN HFET 제작을 위한 오믹접촉에 관한 연구 정두찬;이재승;이정희;김창석;오재용;김종욱;신진호;신무환
  2. 전기전자재료학회논문지 v.14 no.9 GaN 소자의 쇼트키 특성 향상에 관한 연구 윤진섭
  3. Appl. Phys. Lett. v.68 no.21 Hall measurements and contact resistance in doped GaN/AlGaN heterostructures M. A. Khan;M. S. Shur;Q. Chen
  4. J. Cryst. Growth v.189/190 Theory of doping and defects in Ⅲ V Nitrides C. G. Van de Walle;C. Stampfle;J. Neugebauer
  5. Trans. on EEM v.2 no.4 The Mg solid solution for the P type activation of GaN thin films grown by metal organic chemical vapor deposition K. J. Kim;S. J. Chung
  6. Appl. Phys. Lett. v.68 no.10 Deep levels in the upper band gap region of lightly Mg doped GaN P. Hacke;H. Nakayma;T. Detchprohm;K. Hiramatsu;N. Sawaki
  7. Appl. Phys. Lett. v.72 no.11 Nature of the 2.8 eV photoluminescence band in Mg doped GaN U. Kaufmann;M. Kunzer;M. Maier;H. Obloh;A. Ramakrishnan;B. Santic;P. Schlotter
  8. Appl. Phys. Lett. v.76 no.25 Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN L. C. Chen;J. K. Ho;C. S. Jong;C. C. Chiu;K. K. Shih;F. R. Chen;J. J. Kai;L. Chang
  9. J. Appl. Phys v.86 no.8 Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films J. K. Ho;C. S. Jong;C. C. Chiu;C. N. Huang;K. K. Shih;L. C. Chen;F. R. Chen;J. J. Kai
  10. Appl. Phys. Lett. v.78 no.2 Electrical properties of p-type:Mg codoped with oxygen R. Y. Korotkov;J. M. Gregie;B. W. Wessels
  11. Jpn. J. Appl. Phys. v.36 Material design for the fabrication of low-resistivity p-GaN using a codoping method T. Yamamoto;H. K. Yoshida
  12. Appl. Phys. Lett. v.69 no.18 High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant O. Brandt;H. Yang;H. Kostial;K. H. Ploog
  13. The Blue Laser Diode-GaN Based Light Emitter and Lasers S. Nakamura;G. Fasol
  14. Semicond. Sci. Technol. v.14 Atomic model for blue luminescence in Mg-doped GaN S. G. Lee;K. J. Chang
  15. Appl. Phys. Lett. v.76 no.16 Influence of oxygen on the activation of p-type GaN B. A. Hull;S. E. Mohney;H. S. Venugopalan;J. C. Ramer