Fabrication and Properties of MFISFET using SrBi2Ta2O9SiN/Si Structures

SrBi2Ta2O9SiN/Si 구조를 이용한 MFISFET의 제작 및 특성

  • 김광호 (청주대학교 정보통신공학부)
  • Published : 2002.05.01


N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.


  1. IEEE Trans. Electron Devices v.ED-21 no.8 A new ferroelectric memory devics, metal-ferroelectric semiconductor transistor S. Y. Wu
  2. IEEE Int. Solid State Circuits Conf. Tech. Digest. A Ferroelectric Nonvolatile Memory S. S. Eaton;D. B. Butler;M. Parris;D. Wilson;H. McNeillie
  3. 전기전자재료학회지 v.10 no.10 BaMgF₄/Si 구조를 이용한 비휘발성 메모리용 MFSFET의 제작 및 특성 이상우;김광호
  4. 전기전자재료학회논문지 v.12 no.11 고상결정법으로 형성시킨 BaMgF₄박막의 우선 방위에 관한 연구 김용일;김광호;이원종
  5. 전기전자재료학회논문지 v.11 no.2 RF 스퍼터링법을 이용한 LiNbO₃/Si 구조의 전기적 및 구조적 특성 이상우;김광호;이원종
  6. IEEE Electron Device Lett. v.18 no.4 Nonvolatile memory operations of metal-ferroelectric insulator semiconductor (MFIS) FET's using PLZT/STO/Si(100) structures E. Tokumitu;R. Nakamura;H. Ishiwara
  7. IEEE Int. Solid State Circuits Conf. Tech. Digest A Single Transistor Ferroelectric Memory Cell T. Nakamura;Y. Nakao;A. Kamisawa;H. Takasu
  8. IEEE Transactions on Electron Devices v.45 no.3 Making silicon nitride film aviable gate dielectric T. P. Ma
  9. Appl. Phys. Lett. v.72 no.10 SrBi₂Ta₂O9 memory capacitor on Si with a silicon nitride buffer J. P. Han;T. P. Ma
  10. J. Appl. Phys. v.64 no.2 Switching kinetics of lead zirconate titanate submicron thin film memories J. F. Scott;L. Kammerdiner;M. Parris;V. Ottenbacher
  11. Appl. Phys. Lett. v.74 no.13 Crystal structures and ferroelectric properties of SrBi₂Ta₂O9 and Sr0.8Bi2.2 Ta₂O9 Y. Shimakawa;Y. Kudo;Y. Nakagawa;T. Kamiyama;H. Asano;F. Izumi