Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film

SIMS 분석조건이 Bismuth Titanate 박막의 깊이방향 조성 해석에 미치는 영향

  • Kim, Jae Nam (Research Institute of Industrial Science and Technology) ;
  • Lee, Sang Up (Research Institute of Industrial Science and Technology) ;
  • Kwun, Hyug Dae (Research Institute of Industrial Science and Technology) ;
  • Shin, Kwang Soo (Research Institute of Industrial Science and Technology) ;
  • Chon, Uong (Research Institute of Industrial Science and Technology) ;
  • Park, Byung Ok (Department of Inorganic Materials Engineering, KyungPook National University) ;
  • Cho, Sang Hi (Department of Inorganic Materials Engineering, KyungPook National University)
  • 김재남 ((재) 포항산업과학연구원) ;
  • 이상업 ((재) 포항산업과학연구원) ;
  • 권혁대 ((재) 포항산업과학연구원) ;
  • 신광수 ((재) 포항산업과학연구원) ;
  • 전웅 ((재) 포항산업과학연구원) ;
  • 박병옥 (경북대학교 공과대학 무기재료공학과) ;
  • 조상희 (경북대학교 공과대학 무기재료공학과)
  • Received : 2001.08.20
  • Published : 2001.12.25

Abstract

The effect of SIMS analysis conditions such as mesh grid, offset voltage and ion species on the in-depth profile for bismuth titanate thin film was examined in terms of charging effect and detection limit. The results shows that the use of offset voltage -40 V reduces the charging effect and the detection limit. The employment of mesh grid in sample preparation leads to the reduction of the charging effect in small amount, but deteriorate the detection limit. Utilization of primary $O^-$ ion for SIMS analysis of bismuth titanate thin film showed almost the same effect as using offset voltage -40 V. However, it takes approximately triple acquisition time than using $O_2{^+}$ ion due to the poor beam current of the source in the experiment.

Keywords

SIMS;bismuth titanate;FRAM;charging effect;depth profile

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