A Novel Ultraviolet Sensor using Photoluminescent Porous Silicon

광 루미네슨스 다공질 실리콘을 이용한 새로운 자외선 센서

  • 민남기 (고려대 제어계측공학과 정) ;
  • 고주열 (삼성전기 종합연구소) ;
  • 강철구 (고려대 바이오마이크로시스템기술학과)
  • Published : 2001.09.01


In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.


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