A Study on the Dielectric and Annealing Properties in Au/$Ta_2$$O_5$/Pt MIM Capacitor

Au/$Ta_2$$O_5$/Pt MIM Capacitor의 annealing과 유전 특성

  • 김인성 (한국전기연구원 전자기소자그룹) ;
  • 정순종 (한국전기연구원 전자기소자그룹) ;
  • 송재성 (한국전기연구원 전자기소자그룹) ;
  • 윤문수 (한국전기연구원 전자기소자그룹) ;
  • 박정후 (부산대학교 전기공학과)
  • Published : 2001.12.01

Abstract

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

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