Effect of Oxygen Partial Pressure on the Structural, Optical and Electrical Properties of Sputter-deposited Vanadium Oxide Thin Films

스퍼터링으로 증착된 바나듐 산화막의 구조적, 광학적, 전기적 특성에 미치는 산소 분압의 효과

  • 최복길 (공주대학교 정보통신공학부) ;
  • 최창규 (서울산업대학교 전기공학과) ;
  • 권광호 (한서대학교 전자공학과) ;
  • 김성진 (경남대학교 전기전자공학부) ;
  • 이규대 (공주대학교 정보통신공학부)
  • Published : 2001.12.01


Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.


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