Epitaxial Growth of BSCCO Films by Leyer-by-Layer Deposition

순차 증착에 의한 BSCCO 박막의 에피택셜 성장

  • 안준호 (광운대학교 대학원 전기공학과) ;
  • 박용필 (동신대학교 전기전자공학부) ;
  • 김정호 (한국광기술원)
  • Published : 2001.10.01

Abstract

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

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