A Study on the Growth of Carbon Nanotubes Using ICPCVD and Their Field Emission Properties

유도결합형 플라즈마 화학기상 증착법을 이용한 탄소나노튜브의 성장 및 전계방출 특성 연구

  • 김광식 (한국화학연구원 화학소재연구부) ;
  • 류호진 (한국화학연구원 화학소재연구부) ;
  • 장건익 (충북대학교 공과대학 재료공학과)
  • Published : 2001.10.01

Abstract

In this study, carbon nanotubes was vertically grown pm Ni/Cr-deposited glass substrates by Inductively Coupled Plasma Chemical Vapor Deposition. Using Radio-Frequence(RF) plasma below temperature of 600$^{\circ}C$. The grown CNTs shows field emission properties and high quality materials. Turn-on fields and current density showed 5V/${\mu}$m and 1.06${\times}$10$\^$-6/ A/$\textrm{cm}^2$, respectively.

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