Preparation and Characterization of Crystalline Carbon Nitride

결정질 질화탄소 박막의 합성과 그 특성 해석

  • 김종일 (한국기술교육대학교 정보기술공학부) ;
  • 배선기 (인천대학교 전기공학과)
  • Published : 2001.10.01

Abstract

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

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