Indium Diffusion Effects on the Structural and Electrical Properties of ZnO Films Prepared by Ultrasonic Spray Pyrolysis

초음파 분무 열분해법으로 제조한 ZnO막의 전기적, 구조적 특성에 미치는 인듐 확산 효과

  • 심대근 (경상대학교 전기공학과 석사과정 및 공학연구원) ;
  • 배성찬 (경북대학교 전자공학부) ;
  • 마대영 (경상대학교 전기전자공학부 교수 및 공학연구원 연구원)
  • Published : 2001.10.01


Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.


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