Electrical Properties of Sintered $HoSi_2$

$HoSi_2$소결체의 전기적 특성 연구

  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 김형곤 (조선이공대학 전기과) ;
  • 김남오 (조선이공대학 전기과)
  • Published : 2001.10.01


we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.


  1. Silicides for VLSI Applications S. P. Murarka
  2. Journal of Alloys and compounds v.219 Phase diagram of the holmium-silicon binary system and physical properties of holium silicides up to 1050℃ V. N. Eremenko;V. E. Listovnichii;S. P. Luzan;Y. I. Buyanov;P. S. Martsenyuk
  3. Journal of Alloys and compounds v.247 Standard enthalpies of formation of some carbide, silicides, germanides and borides of holmium by high temperature direct synthesis calorimetry S. V. Meschel;O. J. Kleppa
  4. Binary Alloy Phase Diagrams T. B. Massalski;H. Okamoto;P. R. Subramanian;L. Kacprzak
  5. Thin Solid Films v.318 Formation of expitaxial HoSi₂Layer on Si(100) G. Pet$\"{o}$;G. L. Molnar;Z. E. Horv$\'{a}$th;E. Zsoldos;N. Q. Khanh;J. Gyula;J. Kansk
  6. 半導體工學 林基祚
  7. 物質の電氣的 性質 橋口隆吉