Electrical Properties of Sintered $HoSi_2$

$HoSi_2$소결체의 전기적 특성 연구

  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 김형곤 (조선이공대학 전기과) ;
  • 김남오 (조선이공대학 전기과)
  • Published : 2001.10.01

Abstract

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

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