Optimization of PMD(Pre-Metal Dielectric) Linear Nitride Precess

PMD(Pre-Metal Dielectric) 선형 질화막 공정의 최적화에 대한 연구

  • 정소영 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부) ;
  • 서용진 (대불대학교 전기공학과)
  • Published : 2001.10.01

Abstract

In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

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